(module "SOIC127P610X323-8N" (layer F.Cu)
  (descr "SOIC-8-ren4")
  (tags "MOSFET (P-Channel)")
  (attr smd)
  (fp_text reference Q** (at 0 0) (layer F.SilkS))
  (fp_text user %R (at 0 0) (layer F.Fab))
  (fp_text value "SOIC127P610X323-8N" (at 0 0) (layer F.SilkS) hide)
  (pad 1 smd rect (at -2.8 -1.905 90) (size 0.7 1.45) (layers F.Cu F.Paste F.Mask))
  (pad 2 smd rect (at -2.8 -0.635 90) (size 0.7 1.45) (layers F.Cu F.Paste F.Mask))
  (pad 3 smd rect (at -2.8 0.635 90) (size 0.7 1.45) (layers F.Cu F.Paste F.Mask))
  (pad 4 smd rect (at -2.8 1.905 90) (size 0.7 1.45) (layers F.Cu F.Paste F.Mask))
  (pad 5 smd rect (at 2.8 1.905 90) (size 0.7 1.45) (layers F.Cu F.Paste F.Mask))
  (pad 6 smd rect (at 2.8 0.635 90) (size 0.7 1.45) (layers F.Cu F.Paste F.Mask))
  (pad 7 smd rect (at 2.8 -0.635 90) (size 0.7 1.45) (layers F.Cu F.Paste F.Mask))
  (pad 8 smd rect (at 2.8 -1.905 90) (size 0.7 1.45) (layers F.Cu F.Paste F.Mask))
  (model Si4459BDY-T1-GE3.stp
    (at (xyz 0 0 0))
    (scale (xyz 1 1 1))
    (rotate (xyz 0 0 0))
  )
)
