(module "SI7852ADPT1GE3" (layer F.Cu)
  (descr "PowerPAK SO-8 Single")
  (tags "MOSFET (N-Channel)")
  (attr smd)
  (fp_text reference Q** (at -0.140 -0) (layer F.SilkS))
  (fp_text user %R (at -0.140 -0) (layer F.Fab))
  (fp_text value "SI7852ADPT1GE3" (at -0.140 -0) (layer F.SilkS) hide)
  (pad 1 smd rect (at -2.810 -1.905 90) (size 0.610 1.270) (layers F.Cu F.Paste F.Mask))
  (pad 2 smd rect (at -2.810 -0.635 90) (size 0.610 1.270) (layers F.Cu F.Paste F.Mask))
  (pad 3 smd rect (at -2.810 0.635 90) (size 0.610 1.270) (layers F.Cu F.Paste F.Mask))
  (pad 4 smd rect (at -2.810 1.905 90) (size 0.610 1.270) (layers F.Cu F.Paste F.Mask))
  (pad 5 smd rect (at 2.810 1.905 90) (size 0.610 0.710) (layers F.Cu F.Paste F.Mask))
  (pad 6 smd rect (at 2.810 0.635 90) (size 0.610 0.710) (layers F.Cu F.Paste F.Mask))
  (pad 7 smd rect (at 2.810 -0.635 90) (size 0.610 0.710) (layers F.Cu F.Paste F.Mask))
  (pad 8 smd rect (at 2.810 -1.905 90) (size 0.610 0.710) (layers F.Cu F.Paste F.Mask))
  (pad 9 smd rect (at 0.550 -0 0) (size 3.810 3.910) (layers F.Cu F.Paste F.Mask))
  (pad 10 smd rect (at 2.300 -2.083 90) (size 0.255 0.310) (layers F.Cu F.Paste F.Mask))
  (pad 11 smd rect (at 2.300 2.083 90) (size 0.255 0.310) (layers F.Cu F.Paste F.Mask))
  (model SIR880BDP-T1-RE3.stp
    (at (xyz -0.0055118110470884 0 0.0019685039663409))
    (scale (xyz 1 1 1))
    (rotate (xyz -90 0 0))
  )
)
