(module ON_Semiconductor-419BL-03_2018-O-IPC_A (layer F.Cu) (tedit 5EF1AC4F)
(fp_text reference REF** (at -0.9531000000 -2.6750000000 0.0000000000) (layer F.SilkS))
(pad 1 smd rect (at -1.1752805000 -0.9500000000 )(size 1.7556390000 0.6121320000)(layers F.Mask F.Paste F.Cu))
(pad 2 smd roundrect (at -1.1752805000 0.0000000000 )(size 1.7556390000 0.6121320000)(roundrect_rratio 1.0000000000)(layers F.Mask F.Paste F.Cu))
(pad 3 smd roundrect (at -1.1752805000 0.9500000000 )(size 1.7556390000 0.6121320000)(roundrect_rratio 1.0000000000)(layers F.Mask F.Paste F.Cu))
(pad 4 smd roundrect (at 1.1752815000 0.9500000000 )(size 1.7556390000 0.6121320000)(roundrect_rratio 1.0000000000)(layers F.Mask F.Paste F.Cu))
(pad 5 smd roundrect (at 1.1752815000 0.0000000000 )(size 1.7556390000 0.6121320000)(roundrect_rratio 1.0000000000)(layers F.Mask F.Paste F.Cu))
(pad 6 smd roundrect (at 1.1752815000 -0.9500000000 )(size 1.7556390000 0.6121320000)(roundrect_rratio 1.0000000000)(layers F.Mask F.Paste F.Cu))
(model eec.models/ON_Semiconductor_-_FDC638APZ.step
      (at (xyz 0.0000000000 0.0000000000 0.0000000000))
      (rotate (xyz 0.0000000000 0.0000000000 0.0000000000))
      (scale (xyz 1 1 1))
    )
)
