(module LEDRD254W55D595H900 (layer F.Cu) (tedit 60D63FEF)
  (descr "940 nm 100 mA ±17° Through Hole High Power Infrared Emitting Diode - T-1 3/4")
  (fp_text reference REF** (at -0.075 -4.135 0) (layer F.SilkS))
  (fp_text value LEDRD254W55D595H900 (at 8.815 4.115 0) (layer F.Fab))
  (pad C thru_hole rect (at -1.27 0.0) (size 1.61 1.61) (drill 1.07) (layers *.Cu *.Mask))
  (pad A thru_hole circle (at 1.27 0.0) (size 1.61 1.61) (drill 1.07) (layers *.Cu *.Mask))
)