(module DIP762W60P254L458H480Q4N (layer F.Cu) (tedit 6478EB7A)
  (descr DIP-4)
  (tags "Integrated Circuit")
  (fp_text reference IC** (at 0 -3.6) (layer F.SilkS))
  (fp_text value EL817 (at 0 4) (layer F.SilkS) hide)
  (pad 1 thru_hole rect (at -3.81 -1.27) (size 1.2 1.2) (drill 0.8) (layers *.Cu *.Mask))
  (pad 2 thru_hole circle (at -3.81 1.27) (size 1.2 1.2) (drill 0.8) (layers *.Cu *.Mask))
  (pad 3 thru_hole circle (at 3.81 1.27) (size 1.2 1.2) (drill 0.8) (layers *.Cu *.Mask))
  (pad 4 thru_hole circle (at 3.81 -1.27) (size 1.2 1.2) (drill 0.8) (layers *.Cu *.Mask))
  (model EL817.stp
    (at (xyz 0 0 0))
    (scale (xyz 1 1 1))
    (rotate (xyz 0 0 0))
  )
)
